{"product_id":"9783527353996","title":"Nonvolatile Memory and Selector Devices : Technology and Applications (1. Auflage)","description":"\u003cp\u003eThe book reviews the current developments in non-volatile memory technology that employs novel materials such as phase-change materials and two-dimensional materials. It puts a particular emphasis on the so-called selectors, intricate nanostructures that enable the functioning of the advanced memory devices in the first place. The book concludes with an overview of the application of non-volatile memory devices in computer science, hardware security, sensing and wearable electronics. PART I: INTRODUCTION TO NON-VOLATILE MEMORY\n\u003cbr\u003eIntroduction\n\u003cbr\u003e3-D NAND Flash memories: technological evolution and prospective applications\n\u003cbr\u003eNAND Flash Revolution: Conquering Reliability and Variability in the 2D to 3D Transition\n\u003cbr\u003eTwo-Dimensional Materials for Future Transistors\n\u003cbr\u003e \n\u003cbr\u003ePART II: NON-VOLATILE MEMORY BASED ON VARIOUS MECHANISMS\n\u003cbr\u003ePhase-Change Memory\n\u003cbr\u003eMagnetic Random Access Memory: Past, Present and Future\n\u003cbr\u003eFerroelectric Fundamentals Unraveling the Science of HfO2 for Future Electronics\n\u003cbr\u003eHafnium Oxide-Based Ferroelectric Memories: Applications and Future Prospect\n\u003cbr\u003eProgrammable Read-Only Memory (PROM)\n\u003cbr\u003eNRAM: a disruptive carbon-nanotube non-volatile resistance-change memory\n\u003cbr\u003ePhotonic Non-volatile Memory\n\u003cbr\u003e \n\u003cbr\u003ePART III: REDOX-BASED EMERGING NON-VOLATILE MEMORY DEVICES\n\u003cbr\u003eConductive Bridge Random Access Memory (CBRAM) Devices - Materials, Filament Scaling, and Performance\n\u003cbr\u003eOxRAM\n\u003cbr\u003eModeling and HRRAM\n\u003cbr\u003eTwo-dimensional (2D) Materials for Scalable Resistive Switching Devices\n\u003cbr\u003eReliability \u0026amp; Variability of emerging NVM\n\u003cbr\u003eProductization of ReRAM, from concept to market\n\u003cbr\u003e \n\u003cbr\u003ePART IV: SELECTOR DEVICES, AND CHARACTERIZATION TECHNIQUES\n\u003cbr\u003eElectrical characterization, modeling, and simulation of HfO2-based CRS devices\n\u003cbr\u003eSwitching Dynamics of Ag- and Cu-based Diffusive Memristors\n\u003cbr\u003eAmorphous chalcogenide-based threshold switches for selector and memory applications\n\u003cbr\u003eStrategies for the nanoscale characterization of volatile and non-volatile filaments\n\u003cbr\u003e \n\u003cbr\u003ePART V: APPLICATIONS OF EMERGING NON-VOLATILE MEMORY DEVICES\n\u003cbr\u003eEmerging Devices for Neuromorphic Sensing and Computing\n\u003cbr\u003eNonvolatile Resistive Memory Technology for Deep Neural Network Hardware Applications\n\u003cbr\u003eAccelerating Algorithms using Emerging Non-volatile Memory Subsystems for Edge Computing\n\u003cbr\u003eHardware Security using Emerging Non-volatile Memories\n\u003cbr\u003eEvolution of Optoelectronics with Memristors: From Advanced Photodetection to Eye-Like Processing and Beyond\n\u003cbr\u003eEmerging Memristive Electrochemical Ion-Diffusion Devices for RF Applications\n\u003cbr\u003e \n\u003cbr\u003e Writam Banerjee is working as the Principal Engineer of technology development for emerging non-volatile memories (NVM) at GlobalFoundries Dresden, Germany. Having obtained his academic degrees in physics and semiconductor devices, he spent almost 15 years working in academic positions for emerging NVM devices before joining his current role at GlobalFoundries. Dr. Banerjee has authored over 100 scientific publications and has received several awards in his career.\u003c\/p\u003e","brand":"Wiley-VCH","offers":[{"title":"Default Title","offer_id":49074549260523,"sku":"00000_00000_00000_00000","price":452.75,"currency_code":"SGD","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0758\/4484\/5803\/files\/9783527353996-1.jpg?v=1785755600","url":"https:\/\/kinokuniya.com.sg\/products\/9783527353996","provider":"Books Kinokuniya Singapore","version":"1.0","type":"link"}