Explores HfO2-based ferroelectrics for memory, sensing, and advanced electronic applications Ferroelectric hafnium oxide (HfO2)-based materials have transformed the field of electronic materials and device design, offering pathways to overcome long-standing barriers in scalability, compatibility, and reliability. The emergence of robust ferroelectricity in doped HfO2 has revolutionized both research and industry perspectives, providing a viable solution where conventional ferroelectrics often fell short. With contributions from leading experts, HfO2-Based Ferroelectric Materials addresses the critical need for a consolidated reference on HfO2-based ferroelectrics, offering foundational knowledge as well as the latest insights into fabrication, material characterization, and device integration. The book opens with fundamentals of ferroelectricity and the mechanisms driving HfO2-based ferroelectric behavior, before progressing to detailed examinations of deposition techniques, superlattice structures, and reliability considerations. It further explores a broad spectrum of applications, including non-volatile memories, neuromorphic computing, compute-in-memory architectures, and negative capacitance transistors, alongside emerging roles in energy storage, microwave technologies, and piezoelectric systems. Special attention is given to persistent challenges—such as the wake-up effect, fatigue, and imprint issues—and the strategies developed to mitigate them. An authoritative and well-structured resource for advancing the frontiers of electronic materials and device technologies, HfO2-Based Ferroelectric Materials: Explains the origins of ferroelectricity in doped HfO2 and its unique material advantages Details deposition techniques and approaches to regulating ferroelectric behavior Examines device-level challenges, including wake-up effect, fatigue, and imprint reliability Highlights applications spanning non-volatile memories, neuromorphic computing, and energy-effici
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