§07§The contributions contained in this proceedings volume provide a comprehensive overview of recent research progress achieved on silicon carbide and related materials in amorphous, microcrystalline, polycrystalline, and crystalline forms. They report the latest results and applications and present the most up-to-date information essential for scientists, eningeers, and students. §16§Silicon carbide and other group IV-IV materials in theiramorphous, microcrystalline, and crystalline forms have awide variety of applications.The contributions to thisvolume report recent developments and trends in the field.The purpose is to make available the current state ofunderstanding of the materials and their potentialapplications. Eachcontribution focuses on a particulartopic, such as preparation methods, characterization, andmodels explaining experimental findings. The volume alsocontains the latest results in the exciting field of SiGe/Siheterojunction bipolar transistors.The reader will find this book valuable as a referencesource, an up-to-date and in-depth overview of this field,and, most importantly, as a window into the immense range ofreading potential applications of silicon carbide. It isessential for scientists, engineers and students interestedin electronic materials, high-speed heterojunction devices,a §16§nd high-temperature optoelectronics.
