Electromigration and Electronic Device Degradation

508.98 SGD
Member Price
458.09
English

Product Description

Addresses electromigration failure modes in electronics covering both theory and experiments. Reviews silicon and GaAs technologies. Various rate controlling details are summarized including an investigation of temperature dependence. Concludes with a discussion regarding current status and future plans for electromigration resistant advanced metallization systems for VLSI.

This study reviews an important reliability issue for both silicon and GaAs technologies. It surveys the status of electromigration physics in microelectronics, and summarizes various rate controlling details.

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