This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
A description of advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. This work also details the use of carbon-doping and dry etching techniques.
Publisher
World Scientific Publishing Co Pte Ltd
Publication Date
Nov 1996
ISBN
9789810218843
Pages
560
Item Type
Book
Format
Hardcover
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