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Nonvolatile Memory and Selector Devices : Technology and Applications (1. Auflage)

Banerjee, Writam (EDT)
452.75 SGD
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407.48

Product Description

An introduction to foundational memory technology
 
Nonvolatile memory devices have become an ubiquitous component of consumer technology, appearing in products including smartphones, tablets and notebooks, and many more. They enable the high-speed permanent storage and readout of data with high reliability and low energy consumption. The growing incorporation of emerging materials, such as phase-change and two-dimensional materials, promise to further improve these devices and increase their technological reach.
 
Nonvolatile Memory and Selector Devices offers a hands-on overview of these devices and their applications, with a focus on those employing novel materials. It strongly emphasizes so-called selectors, the nanostructures whose intricate design is the basis for all advanced memory devices. Its emphasis on practical tools makes it a must-have for engineers and researchers alike.
 
Nonvolatile Memory and Selector Devices readers will also find:
 
* Devices with immediate potential for mass-fabrication using existing facilities
* An up-to-the-minute analysis of current and emerging research
* Chapters authored by high-profile researchers from academia and industry alike
 
Nonvolatile Memory and Selector Devices is ideal for all researchers and early-career professionals in research or development, looking to develop an understanding of this critical set of electronic components.
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The book reviews the current developments in non-volatile memory technology that employs novel materials such as phase-change materials and two-dimensional materials. It puts a particular emphasis on the so-called selectors, intricate nanostructures that enable the functioning of the advanced memory devices in the first place. The book concludes with an overview of the application of non-volatile memory devices in computer science, hardware security, sensing and wearable electronics. PART I: INTRODUCTION TO NON-VOLATILE MEMORY
Introduction
3-D NAND Flash memories: technological evolution and prospective applications
NAND Flash Revolution: Conquering Reliability and Variability in the 2D to 3D Transition
Two-Dimensional Materials for Future Transistors

PART II: NON-VOLATILE MEMORY BASED ON VARIOUS MECHANISMS
Phase-Change Memory
Magnetic Random Access Memory: Past, Present and Future
Ferroelectric Fundamentals Unraveling the Science of HfO2 for Future Electronics
Hafnium Oxide-Based Ferroelectric Memories: Applications and Future Prospect
Programmable Read-Only Memory (PROM)
NRAM: a disruptive carbon-nanotube non-volatile resistance-change memory
Photonic Non-volatile Memory

PART III: REDOX-BASED EMERGING NON-VOLATILE MEMORY DEVICES
Conductive Bridge Random Access Memory (CBRAM) Devices - Materials, Filament Scaling, and Performance
OxRAM
Modeling and HRRAM
Two-dimensional (2D) Materials for Scalable Resistive Switching Devices
Reliability & Variability of emerging NVM
Productization of ReRAM, from concept to market

PART IV: SELECTOR DEVICES, AND CHARACTERIZATION TECHNIQUES
Electrical characterization, modeling, and simulation of HfO2-based CRS devices
Switching Dynamics of Ag- and Cu-based Diffusive Memristors
Amorphous chalcogenide-based threshold switches for selector and memory applications
Strategies for the nanoscale characterization of volatile and non-volatile filaments

PART V: APPLICATIONS OF EMERGING NON-VOLATILE MEMORY DEVICES
Emerging Devices for Neuromorphic Sensing and Computing
Nonvolatile Resistive Memory Technology for Deep Neural Network Hardware Applications
Accelerating Algorithms using Emerging Non-volatile Memory Subsystems for Edge Computing
Hardware Security using Emerging Non-volatile Memories
Evolution of Optoelectronics with Memristors: From Advanced Photodetection to Eye-Like Processing and Beyond
Emerging Memristive Electrochemical Ion-Diffusion Devices for RF Applications

Writam Banerjee is working as the Principal Engineer of technology development for emerging non-volatile memories (NVM) at GlobalFoundries Dresden, Germany. Having obtained his academic degrees in physics and semiconductor devices, he spent almost 15 years working in academic positions for emerging NVM devices before joining his current role at GlobalFoundries. Dr. Banerjee has authored over 100 scientific publications and has received several awards in his career.

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