This monograph is the first to provide a comprehensive, in-depth treatment of the properties of hydrogen as an impurity, beginning at an introductory level. It describes the states and binding sites that hydrogen assumes in the lattice, the passivation of shallow and deep impurities, the properties of hydrogen-related defects in semiconductors, the diffusivity of the various forms of hydrogen, and the effects of hydrogen on the mechanical properties of semiconductors. Emphasis is placed on the ways in which hydrogen is incorporated during crystal growth and device fabrication, an area of tremendous practical importance. This review of the properties of hydrogen in crystalline semiconductors emphasizes the ways in which hydrogen is incorporated during crystal growth and device fabrication, an area of tremendous practical importance. It is the first monograph covering the properties of hydrogen as an impurity in detail, and will be of interest to all those involved in device physics and semiconductor research and development. 1. Introduction.- 2. Hydrogen Incorporation in Crystalline Semiconductors.- 2.1 Techniques for Hydrogen Incorporation in Semiconductors.- 2.2 Survey of the Configurations of Hydrogen in Semiconductors.- 3. Passivation of Deep Levels by Hydrogen.- 3.1 Deep-Level Passivation in Silicon.- 3.2 Passivation of Defects in Gallium Arsenide.- 3.3 Aluminum Gallium Arsenide.- 3.4 Gallium Phosphide.- 3.5 CdHgTe, Zn3P2.- 3.6 Germanium.- 4. Shallow Impurity Passivation by Atomic Hydrogen.- 4.1 Silicon.- 4.2 Gallium Arsenide.- 4.3 AlGaAs.- 4.4 CdTe and ZnTe.- 4.5 Gallium Phosphide.- 4.6 Germanium.- 4.7 Indium Phosphide.- 4.8 BN and BP.- 4.9 Correlation with Muonium.- 5. Microscopic Properties of Hydrogen-Related Complexes in Silicon from Vibrational Spectroscopy.- 5.1 Vibrational Spectroscopy of H-Related Complexes.- 5.2 Uniaxial Stress Studies of H-Related Complexes.- 5.3 Hydrogen Motion in the B-H Complex.- 5.4 Conclusion.- 6. The Microscopic Characteristics of Impurity-Hydrogen Complexes in III-V Semiconductors.- 6.1 Acceptor-H Complexes.- 6.2 Donor-H Complexes.- 6.3 Unintentional Hydrogenation.- 6.4 Uniaxial Stress Studies.- 6.5 Cluster Calculations for H-Related Complexes in GaAs.- 6.6 Conclusion.- 7. Hydrogen, and Semiconductor Surfaces and Surface Layers.- 7.1 Etching of Silicon Surfaces by Hydrogen.- 7.2 Plasma Etching.- 7.3 Implantation of Protons.- 7.4 Hydrogen on Semiconductor Surfaces.- 8. Hydrogen-Related Defects in Semiconductors.- 8.1 Hydrogen-Related Defects in Silicon.- 8.2 Hydrogen-Related Defects in Germanium.- 8.3 Hydrogen-Related Defects in Compound Semiconductors.- 8.4 Hydrogen-Related IR Bands in Silicon.- 9. Diffusion of Hydrogen in Semiconductors.- 9.1 Diffusion of Hydrogen in Solids.- 9.2 Diffusion Equations.- 9.3 Analysis of Diffusion Profiles.- 9.4 Diffusion of Hydrogen in Silicon.- 9.5 Diffusion of Hydrogen in Germanium.- 9.6 Diffusion in Gallium Arsenide.- 9.7 Diffusion of Hydrogen in Other Materials.- 9.8 Summary.- 10. Resonance Studies Pertinent to Hydrogen in Semiconductors.- 10.1 Electron Paramagnetic Resonance.- 10.2 Related Muon Studies.- 10.3 Perturbed Angular Correlation.- 11. Prevalence of Hydrogen Incorporation and Device Applications.- 11.1 Experimental Studies of Hydrogen Incorporation.- 11.2 Hydrogen Sensing with MOS Structures.- 11.3 Hydrogen in III-V Semiconductors.- 12. Hydrogen and the Mechanical Properties of Semiconductors.- 12.1 Hydrogen Embrittlement.- 12.2 Hydrogen-Related Defects.- 12.3 m-V Semiconductors.- References.
